• DocumentCode
    1523562
  • Title

    Computationally efficient implementation of charge sheet model [MOSFET]

  • Author

    Gildenblat, G. ; Chen, T.L. ; Bendix, P.

  • Author_Institution
    Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
  • Volume
    35
  • Issue
    10
  • fYear
    1999
  • fDate
    5/13/1999 12:00:00 AM
  • Firstpage
    843
  • Lastpage
    844
  • Abstract
    An improved method for computing the surface potential at the drain end of the MOSFET inversion channel is presented. The approach is generic and can be used with different surface potential based MOSFET models. The new algorithm is verified by comparison with numerical computations and experimental data for deep submicron MOSFETs
  • Keywords
    MOSFET; semiconductor device models; surface potential; MOSFET inversion channel; charge sheet model; computationally efficient implementation; deep submicron MOSFETs; surface potential;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990522
  • Filename
    771456
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1523562