Title :
High temperature performance of ion implanted hetero-dimensional JFETs
Author :
Lü, J.Q. ; Pala, N. ; Shur, M. ; Hurt, M.J. ; Peatman, W.C.B.
Author_Institution :
Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
fDate :
5/13/1999 12:00:00 AM
Abstract :
A report is presented on the high temperature performance of ion implanted GaAs hetero-dimensional JFETs. The temperature coefficient of the threshold voltage is ~1 mV/K. The device characteristics exhibit a sharp pinch-off, a small ON current, and a very small output conductance. Hence, this device should be suitable for ultra-low power operation at elevated temperatures
Keywords :
III-V semiconductors; gallium arsenide; high-temperature electronics; ion implantation; junction gate field effect transistors; low-power electronics; GaAs ion implanted JFET; device characteristics; elevated temperatures; hetero-dimensional JFETs; high temperature performance; output conductance; temperature coefficient; threshold voltage; ultra-low power operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990562
