Title :
DC 30 GHz bandwidth and 36 dB gain limiting amplifier for 40 Gbit/s optical transmission systems
Author :
Lao, Z. ; Bosch, Ricard ; Hurm, V. ; Thiede, A. ; Schlechtweg, Michael ; Bronner, W. ; Hornung, J. ; Hulsmann, A. ; Jakobus, T.
Author_Institution :
Fraunhofer-Inst. of Appl. Solid-State Phys., Freiburg
fDate :
12/4/1997 12:00:00 AM
Abstract :
A monolithic limiting amplifier for high speed optical transmission systems has been fabricated using a 0.2 μm enhancement/depletion AlGaAs/GaAs-HEMT (fT=60/55 GHz). The IC has a bandwidth of 30 GHz with a differential gain of 36 dB. The circuit features a differential configuration with active source followers to increase bandwidth. The power consumption is 700 mW using a single supply voltage of -4 V
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; differential amplifiers; gallium arsenide; limiters; optical communication equipment; wideband amplifiers; -4 V; 0.2 micron; 30 GHz; 36 dB; 40 Gbit/s; 700 mW; AlGaAs-GaAs; DC bandwidth; active source follower; differential gain; enhancement/depletion AlGaAs/GaAs HEMT IC; high speed optical transmission system; monolithic limiting amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971460
