DocumentCode
1523670
Title
TDBC SOI technology to suppress floating body effect in PD SOI p-MOSFETs
Author
Jiexin Luo ; Jing Chen ; Qingqing Wu ; Zhan Chai ; Tao Yu ; Xi Wang
Author_Institution
State Key Lab. of Functional Mater. for Inf., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China
Volume
48
Issue
11
fYear
2012
Firstpage
652
Lastpage
653
Abstract
A tunnel diode body contact (TDBC) SOI structure is presented as a means to suppress the floating body effect in partially depleted (PD) SOI p-MOSFETs. Experiments using phosphorus implantation were carried out to form the tunnel diode in the source region. Tunnel diode body contact is embedded in the source region, which can effectively release the accumulated body carriers. The fabricated device shows the suppressed floating body effect as expected. The new structure does not enlarge device size and is fully compatible with SOI CMOS technology.
Keywords
CMOS integrated circuits; MOSFET; silicon-on-insulator; tunnel diodes; PD SOI p-MOSFET; SOI CMOS technology; TDBC SOI technology; fabricated device; floating body effect suppression; partially depleted SOI p-MOSFET; phosphorus implantation; tunnel diode body contact SOI structure;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2012.0980
Filename
6204285
Link To Document