Title :
Simulations of deep level related lock-on conductivity in SiC diodes subject to ultrafast, high voltage reverse biasing pulses
Author :
Joshi, R.P. ; Fazi, C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Old Dominion Univ., Norfolk, VA, USA
fDate :
12/4/1997 12:00:00 AM
Abstract :
Numerical simulations of the transient response of reverse biased silicon carbide (SiC) diodes to fast voltage pulses have been performed. The results obtained reveal that `deep-defects´ can lead to high device currents and persistent conductivity, in keeping with experimental observations. The presence of such levels would be potentially detrimental to device stability
Keywords :
deep levels; electrical conductivity; impact ionisation; power semiconductor diodes; semiconductor device models; silicon compounds; stability; transient analysis; transient response; wide band gap semiconductors; SiC; SiC diodes; deep level related lock-on conductivity; deep-defects; device stability; high device currents; high voltage reverse biasing pulses; numerical simulations; reverse biased diodes; transient response; ultrafast HV reverse biasing pulses;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971462
