• DocumentCode
    1523724
  • Title

    Simulations of deep level related lock-on conductivity in SiC diodes subject to ultrafast, high voltage reverse biasing pulses

  • Author

    Joshi, R.P. ; Fazi, C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Old Dominion Univ., Norfolk, VA, USA
  • Volume
    33
  • Issue
    25
  • fYear
    1997
  • fDate
    12/4/1997 12:00:00 AM
  • Firstpage
    2162
  • Lastpage
    2163
  • Abstract
    Numerical simulations of the transient response of reverse biased silicon carbide (SiC) diodes to fast voltage pulses have been performed. The results obtained reveal that `deep-defects´ can lead to high device currents and persistent conductivity, in keeping with experimental observations. The presence of such levels would be potentially detrimental to device stability
  • Keywords
    deep levels; electrical conductivity; impact ionisation; power semiconductor diodes; semiconductor device models; silicon compounds; stability; transient analysis; transient response; wide band gap semiconductors; SiC; SiC diodes; deep level related lock-on conductivity; deep-defects; device stability; high device currents; high voltage reverse biasing pulses; numerical simulations; reverse biased diodes; transient response; ultrafast HV reverse biasing pulses;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19971462
  • Filename
    645766
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1523724