Title :
Investigating the Drain-Bias-Induced Degradation Behavior Under Light Illumination for InGaZnO Thin-Film Transistors
Author :
Hsieh, Tien-Yu ; Chang, Ting-Chang ; Chen, Te-Chih ; Tsai, Ming-Yen ; Chen, Yu-Te ; Jian, Fu-Yen ; Chung, Yi-Chen ; Ting, Hung-Che ; Chen, Chia-Yu
Author_Institution :
Dept. of Phys., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
fDate :
7/1/2012 12:00:00 AM
Abstract :
This letter investigates the effect of gate/drain bias stress in InGaZnO thin-film transistors under light illumination and in a darkened environment. Drain current-gate voltage (ID-VG) as well as capacitance-voltage (C-V) transfer curves are measured to analyze the degradation behavior. The device characteristic exhibits a positively parallel shift after the gate/drain bias stress in the dark. On the other hand, the identical stress performed under light illumination leads to not only a negative shift but also a distortion of the C-V curve in the off state. Such phenomenon can be attributed to hole-trapping-induced barrier lowering near the drain side after illuminated bias stress.
Keywords :
gallium compounds; hole traps; indium compounds; thin film transistors; zinc compounds; InGaZnO; OFF state; capacitance-voltage transfer curves; darkened environment; device characteristic; drain current-gate voltage; drain-bias-induced degradation behavior; gate-drain bias stress; hole-trapping-induced barrier; light illumination; positively parallel shift; thin-film transistors; Charge carrier processes; Degradation; Lighting; Logic gates; Stress; Thin film transistors; Bias stress; indium gallium zinc oxide (IGZO); light illumination; thin-film transistors (TFTs);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2193112