• DocumentCode
    1523828
  • Title

    Chemical Oxide Interfacial Layer for the High- k -Last/Gate-Last Integration Scheme

  • Author

    Chen, Ying-Tsung ; Fu, Ssu-I ; Chiang, Wen-Tai ; Lin, Chien-Ting ; Tsai, Shih-Hung ; Wang, Shao-Wei ; Chang, Shoou-Jinn

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • Volume
    33
  • Issue
    7
  • fYear
    2012
  • fDate
    7/1/2012 12:00:00 AM
  • Firstpage
    946
  • Lastpage
    948
  • Abstract
    The authors propose a high-k-last with gate-last integration scheme with a chemical oxide interfacial layer (IL). It was found that chemical oxide IL could form Hf-silicate at the high-k/IL interface so as to provide us a larger effective k value and a smaller equivalent oxide thickness (EOT). It was also found that the larger leakage current density for the samples with chemical oxide IL could be effectively suppressed by postdeposition annealing (PDA). Furthermore, it was found that PDA-induced larger EOT could be reduced by optimizing the metal gate stack.
  • Keywords
    annealing; atomic layer deposition; current density; hafnium compounds; high-k dielectric thin films; leakage currents; silicon compounds; surface chemistry; EOT; Hf-SiO4; PDA; atomic layer deposition; chemical oxide IL; chemical oxide interfacial layer; equivalent oxide thickness; high-k-IL interface; high-k-last-gate-last integration scheme; leakage current density; metal gate stack optimization; postdeposition annealing; Chemicals; Current measurement; High K dielectric materials; Leakage current; Logic gates; Metals; Silicon; Equivalent oxide thickness (EOT); Si–O–Hf; high-$k$ ; postdeposition annealing (PDA); work function metal;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2012.2195292
  • Filename
    6204313
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1523828