Title :
Characteristics of a photonic bandgap single defect microcavity electroluminescent device
Author :
Zhou, Wei Dong ; Sabarinathan, Jayshri ; Bhattacharya, Pallab ; Kochman, Boaz ; Berg, Erik W. ; Yu, Pei-Chen ; Pang, Stella W.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
9/1/2001 12:00:00 AM
Abstract :
A microcavity surface-emitting coherent electroluminescent device operating at room temperature under pulsed current injection is described. The microcavity is formed by a single defect in the center of a 2-D photonic crystal consisting of a GaAs-based heterostructure. The gain region consists of two 70-Å compressively strained In0.15Ga0.85As quantum wells, which exhibit a spontaneous emission peak at 940 nm. The maximum measured output power from a single device is 14.4 μW. The near-field image of the output resembles the calculated TE mode distribution in a single defect microcavity. The measured far-field pattern indicates the predicted directionality of a microcavity light source. The light-current characteristics of the device exhibit a gradual turn-on, or a soft threshold, typical of single- or few-mode microcavity devices. Analysis of the characteristics with the carrier and photon rate equations yields a spontaneous emission factor β≈0.06
Keywords :
III-V semiconductors; cavity resonators; electroluminescent devices; gallium arsenide; indium compounds; light sources; micro-optics; optical fabrication; optical materials; optical resonators; photonic band gap; semiconductor quantum wells; spontaneous emission; 14.4 muW; 298 K; 2D photonic crystal; 940 nm; GaAs; GaAs-based heterostructure; In0.15Ga0.85As; In0.15Ga0.85As quantum wells; TE mode distribution; carrier rate equations; compressively strained quantum wells; directionality; far-field pattern; few-mode microcavity devices; gain region; gradual turn-on; light-current characteristics; maximum measured output power; microcavity; microcavity light source; microcavity surface-emitting coherent electroluminescent device; near-field image; output power; photon rate equations; photonic bandgap single defect microcavity electroluminescent device; pulsed current injection; room temperature; single defect; single defect microcavity; single-mode microcavity devices; soft threshold; spontaneous emission factor; spontaneous emission peak a; Electroluminescent devices; Image coding; Microcavities; Photonic band gap; Photonic crystals; Power generation; Power measurement; Spontaneous emission; Tellurium; Temperature;
Journal_Title :
Quantum Electronics, IEEE Journal of
