Title :
Subbandgap Optical Differential Body-Factor Technique and Characterization of Interface States in SOI MOSFETs
Author :
Hong, Euiyoun ; Yun, Daeyoun ; Bae, Hagyoul ; Choi, Hyunjun ; Lee, Won Hee ; Uhm, Mihee ; Seo, Hyojoon ; Lee, Jieun ; Jang, Jaeman ; Kim, Dae Hwan ; Kim, Dong Myong
Author_Institution :
Sch. of Electr. Eng., Kookmin Univ., Seoul, South Korea
fDate :
7/1/2012 12:00:00 AM
Abstract :
A distribution of interface states (Dit) in SOI MOSFETs has been characterized by a subbandgap optical differential body-factor (SODBoF) technique. We adopted a subbandgap (Eph <; Eg) optical source as a virtual gate on the body-contactless SOI MOSFETs under the subthreshold (VGS <; VT) current-voltage characteristics. Employing a differentiation to the body factor, any possible error from the threshold voltage is also suppressed. We applied the SODBoF technique to n- and p-channel SOI MOSFETs on the same wafer and verified the result. Extracted traps over the bandgap ranges Dit = 1010 - 1011 cm-2·eV-1 with a typical U-shape.
Keywords :
MOSFET; interface states; silicon-on-insulator; SODBoF; body-contactless SOI MOSFET; interface states; metal-oxide-semiconductor field-effect transistors; n-channel SOI MOSFET; p-channel SOI MOSFET; subbandgap optical differential body-factor technique; subbandgap optical source; subthreshold current-voltage characteristics; typical U-shape; virtual gate; Interface states; Logic gates; Optical pumping; Optical sensors; Photonic band gap; Threshold voltage; Differential body factor; interface states; silicon on insulator (SOI); subbandgap optical illumination; subthreshold slope;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2194981
