Capacitance–Voltage Measurement With Photon Probe to Quantify the Trap Density of States in Amorphous Thin-Film Transistors

Author

Chang, Youn-Gyoung ; Lee, Hee Sung ; Choi, Kyunghee ; Im, Seongil

Author_Institution

Inst. of Phys. & Appl. Phys., Yonsei Univ., Seoul, South Korea

Volume

33

Issue

7

fYear

2012

fDate

7/1/2012 12:00:00 AM

Firstpage

1015

Lastpage

1017

Abstract

We report on a characterization method to quantitatively estimate the interfacial trap density of states (DOS) in thin-film transistors (TFTs): photon-probe capacitance-voltage (CV) measurement. The photo-CV method was compared to photoexcited charge-collection spectroscopy, which is another photon-probe method using current-voltage (I-V) measurement to meet the same purpose. Here, we directly characterized the DOS of amorphous-Si- and amorphous-InGaZnO-based TFTs using the photon-probe CV measurement, and the results turned out to mainly focus the trap DOS at channel/dielectric interface. On the one hand, the DOS profile by photon-probe I-V method appeared to give additional trap information from the transistor back channel.

Keywords

capacitance measurement; electric current measurement; gallium compounds; indium compounds; thin film transistors; voltage measurement; zinc compounds; DOS profile; InGaZnO; Si; amorphous thin-film transistors; amorphous-based TFT; capacitance-voltage measurement; channel-dielectric interface; characterization method; current-voltage measurement; interfacial trap density of states; photoexcited charge-collection spectroscopy; photon-probe CV measurement; transistor back channel; trap information; Dielectric measurements; Dielectrics; Logic gates; Photonics; Thin film transistors; Voltage measurement; Amorphous InGaZnO (a-IGZO); amorphous Si (a-Si); density of states (DOS); thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2195632

Filename

6204317