Title :
Vertical-coupled SiGe double quantum dots
Author :
Li, Chang B. ; Yamahata, G. ; Xia, J.S. ; Mizuta, Hiroshi ; Oda, Shoichiro ; Shiraki, Yasuhiro
Author_Institution :
Quantum Nanoelectron. Res. Center, Japan Sci. & Technol., Tokyo, Japan
Abstract :
The fabrication of vertical-coupled SiGe double quantum dots and hole transport characteristics at low temperature are presented. By modulating back and side gate voltages, coherent coupling is observed.
Keywords :
Ge-Si alloys; quantum dots; coherent coupling; hole transport characteristics; vertical-coupled double quantum dots;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.0494
