• DocumentCode
    1523903
  • Title

    Vertical-coupled SiGe double quantum dots

  • Author

    Li, Chang B. ; Yamahata, G. ; Xia, J.S. ; Mizuta, Hiroshi ; Oda, Shoichiro ; Shiraki, Yasuhiro

  • Author_Institution
    Quantum Nanoelectron. Res. Center, Japan Sci. & Technol., Tokyo, Japan
  • Volume
    46
  • Issue
    13
  • fYear
    2010
  • Firstpage
    940
  • Lastpage
    941
  • Abstract
    The fabrication of vertical-coupled SiGe double quantum dots and hole transport characteristics at low temperature are presented. By modulating back and side gate voltages, coherent coupling is observed.
  • Keywords
    Ge-Si alloys; quantum dots; coherent coupling; hole transport characteristics; vertical-coupled double quantum dots;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2010.0494
  • Filename
    5493546
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1523903