Single-Photon Counting Detectors

Author

Cova, Sergio D. ; Ghioni, Massimo

Author_Institution

Dipt. di Elettron. e Inf., Politec. di Milano, Milano, Italy

Volume

3

Issue

2

fYear

2011

fDate

4/1/2011 12:00:00 AM

Firstpage

274

Lastpage

277

Abstract

Various new developments for array detectors based on Silicon Single-Photon Avalanche Diodes (SPADs) were reported. Improved Si-SPAD technologies brought higher detection efficiency in the red wavelength range. Higher performance was attained with InGaAs/lnP SPADs by employing fast circuit techniques and by monolithic resistor-detector integration. New lnGaAs(P)/lnP SPAD array detectors provide remarkable performance in the near-infrared range (NIR). Photon detection at longer wavelengths (up to 3.5 μm) was pursued with antimonide SPADs and Superconducting Single-Photon Detectors (SSPD).

Keywords

III-V semiconductors; avalanche photodiodes; elemental semiconductors; gallium arsenide; indium compounds; photodetectors; photon counting; sensor arrays; silicon; superconducting photodetectors; InGaAs-InP; SPAD array detectors; Si; nearinfrared range; single photon avalanche diode; single photon counting detectors; superconducting single photon detectors; Arrays; Detectors; Indium gallium arsenide; Indium phosphide; Photonics; Silicon; Photon counting; array detector; avalanche diode; photon timing;

fLanguage

English

Journal_Title

Photonics Journal, IEEE

Publisher

ieee

ISSN

1943-0655

Type

jour

DOI

10.1109/JPHOT.2011.2130518

Filename

5772685