Title :
Single-Photon Counting Detectors
Author :
Cova, Sergio D. ; Ghioni, Massimo
Author_Institution :
Dipt. di Elettron. e Inf., Politec. di Milano, Milano, Italy
fDate :
4/1/2011 12:00:00 AM
Abstract :
Various new developments for array detectors based on Silicon Single-Photon Avalanche Diodes (SPADs) were reported. Improved Si-SPAD technologies brought higher detection efficiency in the red wavelength range. Higher performance was attained with InGaAs/lnP SPADs by employing fast circuit techniques and by monolithic resistor-detector integration. New lnGaAs(P)/lnP SPAD array detectors provide remarkable performance in the near-infrared range (NIR). Photon detection at longer wavelengths (up to 3.5 μm) was pursued with antimonide SPADs and Superconducting Single-Photon Detectors (SSPD).
Keywords :
III-V semiconductors; avalanche photodiodes; elemental semiconductors; gallium arsenide; indium compounds; photodetectors; photon counting; sensor arrays; silicon; superconducting photodetectors; InGaAs-InP; SPAD array detectors; Si; nearinfrared range; single photon avalanche diode; single photon counting detectors; superconducting single photon detectors; Arrays; Detectors; Indium gallium arsenide; Indium phosphide; Photonics; Silicon; Photon counting; array detector; avalanche diode; photon timing;
Journal_Title :
Photonics Journal, IEEE
DOI :
10.1109/JPHOT.2011.2130518
