DocumentCode
1524025
Title
InGaAsP DC-PBH semiconductor laser diode frequency response model
Author
de Salles, A.A.A.
Author_Institution
Catholic Univ. of Rio de Janeiro
Volume
38
Issue
5
fYear
1990
fDate
5/1/1990 12:00:00 AM
Firstpage
677
Lastpage
679
Abstract
Presents a simple and accurate model for the frequency response of InGaAsP double-channel planar buried heterostructure (DC-PBH) semiconductor laser diodes intensity modulated in the microwave range. It is shown that the parasitic capacitance associated with the reverse-biased blocking junction can significantly reduce the 3-dB modulation bandwidth. The results obtained and alternatives to improve the high-frequency performance are discussed and compared to experiments
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser frequency stability; semiconductor junction lasers; 3-dB modulation bandwidth; InGaAsP; double-channel planar buried heterostructure; frequency response; intensity modulated; microwave range; parasitic capacitance; reverse-biased blocking junction; semiconductor laser diodes; Bandwidth; Diode lasers; Distributed feedback devices; Equivalent circuits; Frequency response; Indium phosphide; Laser feedback; Laser modes; P-n junctions; Parasitic capacitance;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.54942
Filename
54942
Link To Document