Title :
InGaAsP DC-PBH semiconductor laser diode frequency response model
Author :
de Salles, A.A.A.
Author_Institution :
Catholic Univ. of Rio de Janeiro
fDate :
5/1/1990 12:00:00 AM
Abstract :
Presents a simple and accurate model for the frequency response of InGaAsP double-channel planar buried heterostructure (DC-PBH) semiconductor laser diodes intensity modulated in the microwave range. It is shown that the parasitic capacitance associated with the reverse-biased blocking junction can significantly reduce the 3-dB modulation bandwidth. The results obtained and alternatives to improve the high-frequency performance are discussed and compared to experiments
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser frequency stability; semiconductor junction lasers; 3-dB modulation bandwidth; InGaAsP; double-channel planar buried heterostructure; frequency response; intensity modulated; microwave range; parasitic capacitance; reverse-biased blocking junction; semiconductor laser diodes; Bandwidth; Diode lasers; Distributed feedback devices; Equivalent circuits; Frequency response; Indium phosphide; Laser feedback; Laser modes; P-n junctions; Parasitic capacitance;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
