Title :
Design and applications of optically controllable finline structures
Author :
Uhde, K. ; Eimertenbrink, R.
Author_Institution :
Philips GmbH, Hamburg, West Germany
fDate :
5/1/1990 12:00:00 AM
Abstract :
The design of finline structures on a semiconducting substrate is described. Using high-resistivity silicon and gallium arsenide substrates, insertion losses between 1 dB and 2 dB are achieved. By illuminating the slot region with a laser diode, attenuators and/or switches with on-off ratios up to -40 dB are realized in the 26.5-40 GHz region. The attenuation, phase shift, and switching times are given. Other applications are also discussed
Keywords :
III-V semiconductors; elemental semiconductors; fin lines; gallium arsenide; losses; silicon; waveguide attenuators; 1 to 2 dB; 26.5 to 40 GHz; GaAs; Si; attenuators; insertion losses; laser diode; on-off ratios; optically controllable finline structures; phase shift; semiconducting substrate; slot region; switches; switching times; Finline; Gallium arsenide; Insertion loss; Optical attenuators; Optical control; Optical design; Optical losses; Semiconductivity; Silicon; Substrates;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
