Title :
Picosecond optoelectronic measurement of S parameters and optical response of an AlGaAs/GaAs HBT
Author :
Matloubian, M. ; Fetterman, H. ; Kim, M. ; Oki, A. ; Camou, J. ; Moss, S. ; Smith, D.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
fDate :
5/1/1990 12:00:00 AM
Abstract :
The S parameters of an AlGaAs/GaAs heterojunction bipolar transistor (HBT) are measured using a picosecond optoelectronic system. The measured S parameters show qualitatively good agreement with those obtained using a conventional vector network analyzer. The optical response of the HBT is also measured using this system by directly illuminating the base-collector region. Used as a phototransistors, the HBT shows pulse widths with full-width half-maximum (FWHM) as short at 15 ps
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; phototransistors; 15 ps; AlGaAs-GaAs; HBT; S parameters; base-collector region; full-width half-maximum; heterojunction bipolar transistor; optical response; phototransistors; picosecond optoelectronic system; pulse widths; vector network analyzer; Bandwidth; Circuit testing; Fixtures; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit measurements; Millimeter wave measurements; Scattering parameters; Semiconductor devices;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
