RF performance of a novel planar millimeter-wave diode incorporating an etched surface channel

Author

Garfield, Diane G. ; Mattauch, Robert J. ; Weinreb, Sander

Author_Institution

Stanford Telecommun. Inc., Reston, VA, USA

Volume

39

Issue

1

fYear

1991

fDate

1/1/1991 12:00:00 AM

Firstpage

1

Lastpage

5

Abstract

A whiskerless millimeter-wave mixer diode that yields performance comparable to that of the highest-quality whisker-contacted diodes is discussed. The diode uses an etched surface channel and planar air bridge to obtain greatly reduced parasitic capacitance. At 94 GHz, the room-temperature diode exhibited a conversion loss of 5.3 dB±0.5 dB and an equivalent input noise temperature of 518 K±50 K SSB (single sideband)

Keywords

Schottky-barrier diodes; mixers (circuits); solid-state microwave devices; 5.3 dB; 94 GHz; EHF; MM-wave devices; RF performance; SSB operation; conversion loss; equivalent input noise temperature; etched surface channel; planar air bridge; planar millimeter-wave diode; reduced parasitic capacitance; room temperature operation; room-temperature diode; whiskerless millimeter-wave mixer diode; Anodes; Bridge circuits; Capacitance; Etching; Gallium arsenide; Laboratories; Millimeter wave technology; Radio frequency; Schottky diodes; Temperature;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.64597

Filename

64597