DocumentCode
1524156
Title
From H. Kroemer and B. Lax to modern solid-state (semiconductor) cyclotron resonance masers
Author
Andronov, Alexander A.
Author_Institution
Inst. for Phys. of Microstruct., Acad. of Sci., Nizhny Novgorod, Russia
Volume
27
Issue
2
fYear
1999
fDate
4/1/1999 12:00:00 AM
Firstpage
303
Lastpage
312
Abstract
Presents an overview of mechanisms responsible for cyclotron resonance amplification in semiconductors as compared to that in the gyrotrons and a discussion of the ways to create beam-like and/or inverted distribution in the bulk of semiconductors by application of electric field is presented. Observation results on negative mass and light hole cyclotron resonance stimulated emission in Ge are discussed with the main emphasis on demonstration of the mechanisms responsible for the emissions. Some modern trends are also briefly considered
Keywords
cyclotron masers; elemental semiconductors; germanium; hot carriers; stimulated emission; Ge; beam-like distribution; cyclotron resonance amplification; inverted distribution; light hole cyclotron resonance stimulated emission; negative mass; semiconductor cyclotron resonance masers; Chromium; Cyclotrons; Finite impulse response filter; Gyrotrons; Masers; Optical pumping; Physics; Proposals; Resonance; Solid state circuits;
fLanguage
English
Journal_Title
Plasma Science, IEEE Transactions on
Publisher
ieee
ISSN
0093-3813
Type
jour
DOI
10.1109/27.772256
Filename
772256
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