DocumentCode :
1524156
Title :
From H. Kroemer and B. Lax to modern solid-state (semiconductor) cyclotron resonance masers
Author :
Andronov, Alexander A.
Author_Institution :
Inst. for Phys. of Microstruct., Acad. of Sci., Nizhny Novgorod, Russia
Volume :
27
Issue :
2
fYear :
1999
fDate :
4/1/1999 12:00:00 AM
Firstpage :
303
Lastpage :
312
Abstract :
Presents an overview of mechanisms responsible for cyclotron resonance amplification in semiconductors as compared to that in the gyrotrons and a discussion of the ways to create beam-like and/or inverted distribution in the bulk of semiconductors by application of electric field is presented. Observation results on negative mass and light hole cyclotron resonance stimulated emission in Ge are discussed with the main emphasis on demonstration of the mechanisms responsible for the emissions. Some modern trends are also briefly considered
Keywords :
cyclotron masers; elemental semiconductors; germanium; hot carriers; stimulated emission; Ge; beam-like distribution; cyclotron resonance amplification; inverted distribution; light hole cyclotron resonance stimulated emission; negative mass; semiconductor cyclotron resonance masers; Chromium; Cyclotrons; Finite impulse response filter; Gyrotrons; Masers; Optical pumping; Physics; Proposals; Resonance; Solid state circuits;
fLanguage :
English
Journal_Title :
Plasma Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-3813
Type :
jour
DOI :
10.1109/27.772256
Filename :
772256
Link To Document :
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