• DocumentCode
    1524156
  • Title

    From H. Kroemer and B. Lax to modern solid-state (semiconductor) cyclotron resonance masers

  • Author

    Andronov, Alexander A.

  • Author_Institution
    Inst. for Phys. of Microstruct., Acad. of Sci., Nizhny Novgorod, Russia
  • Volume
    27
  • Issue
    2
  • fYear
    1999
  • fDate
    4/1/1999 12:00:00 AM
  • Firstpage
    303
  • Lastpage
    312
  • Abstract
    Presents an overview of mechanisms responsible for cyclotron resonance amplification in semiconductors as compared to that in the gyrotrons and a discussion of the ways to create beam-like and/or inverted distribution in the bulk of semiconductors by application of electric field is presented. Observation results on negative mass and light hole cyclotron resonance stimulated emission in Ge are discussed with the main emphasis on demonstration of the mechanisms responsible for the emissions. Some modern trends are also briefly considered
  • Keywords
    cyclotron masers; elemental semiconductors; germanium; hot carriers; stimulated emission; Ge; beam-like distribution; cyclotron resonance amplification; inverted distribution; light hole cyclotron resonance stimulated emission; negative mass; semiconductor cyclotron resonance masers; Chromium; Cyclotrons; Finite impulse response filter; Gyrotrons; Masers; Optical pumping; Physics; Proposals; Resonance; Solid state circuits;
  • fLanguage
    English
  • Journal_Title
    Plasma Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0093-3813
  • Type

    jour

  • DOI
    10.1109/27.772256
  • Filename
    772256