DocumentCode
1524179
Title
Electromigration modeling for integrated circuit interconnect reliability analysis
Author
Clement, J. Joseph
Author_Institution
Sandia Nat. Labs., Albuquerque, NM, USA
Volume
1
Issue
1
fYear
2001
fDate
3/1/2001 12:00:00 AM
Firstpage
33
Lastpage
42
Abstract
A simple one-dimensional continuum model for electromigration transport has been fairly successful as a tool for understanding many empirical observations of electromigration phenomena in encapsulated interconnect lines on integrated circuits. In this paper, the development of the one-dimensional continuum electromigration model is reviewed, Comparisons are made with previous models, emphasizing the important similarities and differences,
Keywords
electromigration; encapsulation; integrated circuit interconnections; integrated circuit modelling; integrated circuit reliability; electromigration modeling; encapsulated interconnect lines; integrated circuit interconnect reliability; one-dimensional continuum model; Aluminum; Circuit analysis; Copper; Dielectric materials; Electromigration; Electrons; Integrated circuit interconnections; Integrated circuit modeling; Integrated circuit reliability; Stress;
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/7298.946458
Filename
946458
Link To Document