Title :
Electromigration modeling for integrated circuit interconnect reliability analysis
Author :
Clement, J. Joseph
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fDate :
3/1/2001 12:00:00 AM
Abstract :
A simple one-dimensional continuum model for electromigration transport has been fairly successful as a tool for understanding many empirical observations of electromigration phenomena in encapsulated interconnect lines on integrated circuits. In this paper, the development of the one-dimensional continuum electromigration model is reviewed, Comparisons are made with previous models, emphasizing the important similarities and differences,
Keywords :
electromigration; encapsulation; integrated circuit interconnections; integrated circuit modelling; integrated circuit reliability; electromigration modeling; encapsulated interconnect lines; integrated circuit interconnect reliability; one-dimensional continuum model; Aluminum; Circuit analysis; Copper; Dielectric materials; Electromigration; Electrons; Integrated circuit interconnections; Integrated circuit modeling; Integrated circuit reliability; Stress;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/7298.946458
