Transient RF signals during the switching of MESFET control devices

Author

Jain, Nitin ; Gutmann, Ronald J. ; Johnson, David M.

Author_Institution

Dept. of Electr., Comput. & Syst. Eng., Rensselaer Polytechnic Inst., Troy, NY, USA

Volume

39

Issue

1

fYear

1991

fDate

1/1/1991 12:00:00 AM

Firstpage

18

Lastpage

24

Abstract

An analytical model that predicts the intrinsic small-signal switching transients for MESFET control devices is developed. Theoretical results for video-breakthrough and small-signal RF switching waveforms are in excellent agreement with measurements on many devices. Although the intrinsic transients are less than a few nanoseconds in duration, FET material aspects (such as surface states) can induce much longer transients. The 10-90% switching time, which is dominated by intrinsic effects, can be lowered by reducing gate length and gate bias resistance (the latter is more feasible with recently reported diode-gate FFTs)

Keywords

Schottky gate field effect transistors; electromagnetic compatibility; radiofrequency interference; semiconductor device models; semiconductor switches; transients; FET material aspects; MESFET control devices; analytical model; diode-gate FFTs; gate bias resistance; gate length; intrinsic effects; intrinsic small-signal switching transients; intrinsic transients; measurements; small-signal RF switching waveforms; surface states; switching time; transient RF signals; video-breakthrough; Analytical models; Attenuators; Capacitance; MESFETs; RF signals; Radio frequency; Schottky diodes; Semiconductor diodes; Switches; Transient analysis;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.64600

Filename

64600