Title :
A Novel Double HBT-Based Capacitorless 1T DRAM Cell With Si/SiGe Heterojunctions
Author :
Shin, Ja Sun ; Bae, Hagyoul ; Jang, Jaeman ; Yun, Daeyoun ; Lee, Jieun ; Hong, Euiyoun ; Kim, Dae Hwan ; Kim, Dong Myong
Author_Institution :
Sch. of Electr. Eng., Kookmin Univ., Seoul, South Korea
fDate :
7/1/2011 12:00:00 AM
Abstract :
We propose a novel double heterojunction bipolar transistor (DHBT)-based capacitorless one-transistor (1T) DRAM cell employing a narrow bandgap SiGe body and Si/SiGe heterojunction for a possible next-generation DRAM cell. It has a body with a narrow bandgap and a valence band offset between the source/drain and the body. Through an extended investigation via TCAD simulation, we verified the advantages of the proposed DHBT-based 1T DRAM cell, including an improved excess carrier generation rate, a high current gain, a large sensing margin, and a suppressed sensitivity to the bandgap-narrowing effect in the heavily doped source and drain.
Keywords :
DRAM chips; Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; semiconductor doping; sensitivity; silicon; technology CAD (electronics); valence bands; Si-SiGe; TCAD simulation; bandgap-narrowing effect; capacitorless one-transistor DRAM cell; current gain; double HBT-based capacitorless 1T DRAM cell; double heterojunction bipolar transistor; heavily doped drain; heavily doped source; narrow bandgap semiconductor; next-generation DRAM cell; sensitivity; valence band offset; Heterojunctions; Logic gates; Photonic band gap; Random access memory; Sensors; Silicon; Silicon germanium; Bipolar-junction transistor (BJT); TCAD simulation; heterojunction bipolar transistor (HBT); one-transistor (1T) DRAM; retention time;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2142390
