• DocumentCode
    1524321
  • Title

    Metal-Base Transistor With \\hbox {C}_{70}

  • Author

    Schulz, Dietmar ; Holz, Eikner ; Yusoff, Abd Rashid Bin Mohd ; Song, Ying ; Shuib, Saiful Anuar

  • Author_Institution
    Komax Syst. LCF SA, La Chaux-de-Fonds, Switzerland
  • Volume
    32
  • Issue
    7
  • fYear
    2011
  • fDate
    7/1/2011 12:00:00 AM
  • Firstpage
    970
  • Lastpage
    972
  • Abstract
    In this letter, we propose an organic transistor using a C70 sandwich emitter to reduce the leakage current. An off -state leakage current that is smaller than 10-10 (minimum of 1 × 10-11 A) can be achieved (from VCE = 0-5 V and IB = 0). The substantially reduced leakage current results in an excellent on-to-off current ratio that is up to 1.8 × 106. A small magnetocurrent effect of about 15% is obtained with an optimum emitter thickness.
  • Keywords
    bipolar transistors; fullerene devices; fullerenes; leakage currents; C70 sandwich emitter; leakage current; magnetocurrent effect; metal-base transistor; on-to-off current ratio; organic transistor; Current measurement; Integrated circuits; Magnetic devices; Magnetic semiconductors; Magnetic tunneling; Temperature measurement; Transistors; Bipolar transistor; metal-base transistor (MBT); polymer blends;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2149493
  • Filename
    5772909
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1524321