DocumentCode
1524404
Title
Post-Silicon Clock Deskew Employing Hot-Carrier Injection Trimming With On-Chip Skew Monitoring and Auto-Stressing Scheme for Sub/Near Threshold Digital Circuits
Author
Pu, Yu ; Zhang, Xin ; Ikeuchi, Katsuyuki ; Muramatsu, Atsushi ; Kawasumi, Atsushi ; Takamiya, Makoto ; Nomura, Masahiro ; Shinohara, Hirofumi ; Sakurai, Takayasu
Author_Institution
Univ. of Tokyo, Tokyo, Japan
Volume
58
Issue
5
fYear
2011
fDate
5/1/2011 12:00:00 AM
Firstpage
294
Lastpage
298
Abstract
Clock skew is a major cause of severe timing yield degradation for sub-/near-threshold digital circuits. We report for the first time on employing hot-carrier injection (HCI) for post silicon clock-deskew trimming. An HCI trimmed clock buffer, which can be individually selected and stressed to adjust the clock edge, is proposed. In addition, it can be used in conjunction with on-chip skew monitoring circuits to achieve auto-stressing. Our approach is proven to be effective through a representative 1.1-mm × 0.8-mm clock tree in a 40-nm high-k complimentary metal-oxide-semiconductor process. On average, it reduces the clock skew by eight times at 0.4 V Vdd. No significant recovery is noticed two weeks after trimming.
Keywords
CMOS digital integrated circuits; buffer circuits; clocks; elemental semiconductors; hot carriers; silicon; HCI trimmed clock buffer; Si; autostressing scheme; clock edge; high-k complimentary metal-oxide-semiconductor process; hot-carrier injection; on-chip skew monitoring circuits; post-silicon clock deskew; size 40 nm; sub-near threshold digital circuits; Clocks; High K dielectric materials; Hot carrier injection; Human computer interaction; Logic gates; Monitoring; System-on-a-chip; Clock skew; hot-carrier injection (HCI); post-silicon tuning; sub-/near-threshold;
fLanguage
English
Journal_Title
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher
ieee
ISSN
1549-7747
Type
jour
DOI
10.1109/TCSII.2011.2149050
Filename
5772921
Link To Document