• DocumentCode
    1524424
  • Title

    A Double-Heterojunction Bipolar Transistor Having a Degenerately Doped Emitter and Backward-Diode Base Contact

  • Author

    Cohen-Elias, D. ; Kraus, S. ; Cohen, S. ; Gavrilov, A. ; Ritter, D.

  • Author_Institution
    Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel
  • Volume
    58
  • Issue
    7
  • fYear
    2011
  • fDate
    7/1/2011 12:00:00 AM
  • Firstpage
    1952
  • Lastpage
    1956
  • Abstract
    A double-heterojunction bipolar transistor having a degenerately doped emitter layer is investigated. The base-emitter Esaki diode introduces very low input impedance in the off- state but does not degrade the current gain at high forward bias. The heavily doped emitter layer makes it possible to scale the emitter-layer thickness considerably. The heavily doped emitter layer also allows contacting the base via the base-emitter backward diode. The high-frequency performance of the device is presented.
  • Keywords
    heterojunction bipolar transistors; tunnel diodes; backward diode base contact; base-emitter Esaki diode; base-emitter backward diode; degenerately doped emitter; double heterojunction bipolar transistor; Capacitance; DH-HEMTs; Heterojunction bipolar transistors; Indium phosphide; Junctions; Resistance; Tunneling; Backward-diode; DHBT; InP; bipolar transistor; heterojunction bipolar transistors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2011.2142186
  • Filename
    5772924
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1524424