Title :
A Double-Heterojunction Bipolar Transistor Having a Degenerately Doped Emitter and Backward-Diode Base Contact
Author :
Cohen-Elias, D. ; Kraus, S. ; Cohen, S. ; Gavrilov, A. ; Ritter, D.
Author_Institution :
Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel
fDate :
7/1/2011 12:00:00 AM
Abstract :
A double-heterojunction bipolar transistor having a degenerately doped emitter layer is investigated. The base-emitter Esaki diode introduces very low input impedance in the off- state but does not degrade the current gain at high forward bias. The heavily doped emitter layer makes it possible to scale the emitter-layer thickness considerably. The heavily doped emitter layer also allows contacting the base via the base-emitter backward diode. The high-frequency performance of the device is presented.
Keywords :
heterojunction bipolar transistors; tunnel diodes; backward diode base contact; base-emitter Esaki diode; base-emitter backward diode; degenerately doped emitter; double heterojunction bipolar transistor; Capacitance; DH-HEMTs; Heterojunction bipolar transistors; Indium phosphide; Junctions; Resistance; Tunneling; Backward-diode; DHBT; InP; bipolar transistor; heterojunction bipolar transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2142186
