Title :
Magneto-Electric Coupling in a Multiferroic Tunnel Junction Functioning as a Magnetic-Field-Effect Transistor
Author :
Zhou, Yan ; Woo, Chung-Ho ; Zheng, Y.
Author_Institution :
Dept. of Electron. & Inf. Eng., Hong Kong Polytech. Univ., Hong Kong, China
Abstract :
A nanoscaled multilayered composite structure made of a ferroelectric tunnel capacitor attached to a magnetic sensor layer is studied using a Landau-Ginzburg thermodynamic model. The relation between the polarization and the mechanical load induced by the magnetic signal via electrostriction is established. Our results suggest that the spin-flip-induced resistance change of such a structure may reach hundreds of percents to orders of magnitude, which is sufficiently strong to allow its use as a magnetic-field-effect transistor.
Keywords :
Ginzburg-Landau theory; electrostriction; ferroelectric capacitors; field effect transistors; magnetic multilayers; magnetic sensors; magnetic tunnelling; magnetoelectric effects; multiferroics; nanocomposites; thermodynamics; Landau-Ginzburg thermodynamic model; electrostriction; ferroelectric tunnel capacitor; magnetic sensor layer; magnetic signal; magnetic-field-effect transistor; magneto-electric coupling; multiferroic tunnel junction; nanoscaled multilayered composite structure; spin-flip-induced resistance change; Magnetic domains; Magnetic separation; Magnetic tunneling; Magnetomechanical effects; Transistors; Giant magnetoresistance (GMR); magnetic-field-effect transistor (MFET); spintronics devices;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2011.2157355
