DocumentCode
1524602
Title
Numerical Simulation on the Photovoltaic Behavior of an Amorphous-Silicon Nanowire-Array Solar Cell
Author
Pei, Zingway ; Chang, Shu-Tong ; Liu, Chang-Wei ; Chen, Yi-Chan
Author_Institution
Dept. of Electr. Eng., Nat. Chung Hsing Univ., Taichung, Taiwan
Volume
30
Issue
12
fYear
2009
Firstpage
1305
Lastpage
1307
Abstract
In this letter, we propose an amorphous-silicon (a-Si) solar cell with a nanowire-array structure. The proposed structure has photon absorption and carrier transport that are perpendicular to each other, which could overcome the efficiency limit of an a-Si solar cell. This nanowire structure has an n-type a-Si nanowire array in which the i-layer and the p-layer a-Si are sequentially grown along the surface of the nanowire. Under illumination, light is absorbed along the axial direction of the nanowire, and carrier transport is along the radial direction. Numerical simulations show that the photocurrent of the a-Si solar cell with a 4000-nm-long nanowire is nearly 40% more than that of a planar a-Si solar cell. A conversion efficiency of 11.6% was obtained, which is around 32% enhancement.
Keywords
amorphous semiconductors; carrier mobility; photodetectors; solar cells; amorphous silicon; carrier transport; conversion efficiency; illumination; nanowire-array solar cell; photocurrent; photon absorption; photovoltaic behavior; radial direction; sequentially grown; Amorphous-silicon (a-Si); nanowire array; solar cell;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2009.2033318
Filename
5299268
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