DocumentCode
1524895
Title
Through-wafer optical interconnection coupling characteristics
Author
Hornak, Lawrence A.
Author_Institution
AT&T Bell Labs., Holmdel, NJ
Volume
24
Issue
11
fYear
1988
fDate
5/26/1988 12:00:00 AM
Firstpage
714
Lastpage
715
Abstract
Both the optical coupling and resulting optical crosstalk characteristics for LED-based through-wafer optical interconnections have been measured within a simulated stacked wafer environment. Using integrated SiO2 Fresnel phase plate lens arrays, a nearly 4:1 improvement in received signal was noted over the configuration without lenses. Interchannel crosstalk measurements indicate that from an optical standpoint, high interconnect densities (250 μm pitch) are obtainable with reasonable noise margins over a range of distances of interest for stacked wafer architectures
Keywords
crosstalk; integrated circuit technology; light emitting diodes; optical couplers; optical links; photodetectors; 250 micron; Fresnel phase plate lens arrays; LED-based; PIN detector array; SiO2-Si; high interconnect densities; light emitting diodes; optical coupling; optical crosstalk; simulated stacked wafer environment; stacked wafer architectures; through-wafer optical interconnections;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
5773
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