• DocumentCode
    1524905
  • Title

    Improved electrical characteristics of CoSi2 using HF-vapor pretreatment

  • Author

    Wu, Y.H. ; Chen, W.J. ; Chang, S.L. ; Chin, Albert ; Gwo, S. ; Tsai, C.

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    20
  • Issue
    7
  • fYear
    1999
  • fDate
    7/1/1999 12:00:00 AM
  • Firstpage
    320
  • Lastpage
    322
  • Abstract
    We have developed a simple process to form epitaxial CoSi/sub 2/ for shallow junctions. Prior to metal deposition, the patterned wafers were treated with HF-vapor passivation. As observed by scanning tunneling microscopy (STM), this HF treatment drastically improves the native oxide-induced surface roughness. The epitaxial behavior was confirmed by cross-sectional transmission electron microscopy (TEM). Decreased sheet resistance and leakage current, and improved thermal stability are displayed by the HF treated samples, which is consistent with STM and TEM results.
  • Keywords
    passivation; CoSi/sub 2/; HF; cross-sectional transmission electron microscopy; electrical characteristics; leakage current; native oxide-induced surface roughness; passivation; patterned wafers; scanning tunneling microscopy; shallow junctions; sheet resistance; thermal stability; vapor pretreatment; Electric variables; Hafnium; Passivation; Rough surfaces; Surface resistance; Surface roughness; Surface treatment; Thermal resistance; Transmission electron microscopy; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.772363
  • Filename
    772363
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1524905