Title :
Electrical characteristics of new LDD poly-Si TFT structure tolerant to process misalignment
Author :
Byung-Hyuk Min ; Kanicki, J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
7/1/1999 12:00:00 AM
Abstract :
A new lightly doped drain (LDD) poly-Si TFT structure having symmetrical electrical characteristics independent of the process induced misalignment is described in this paper. Based on the experimental results, we have established that there is no difference between the bi-directional I/sub D/-V/sub G/ characteristics, and a low leakage current, comparable to a conventional LDD poly-Si TFT, has been maintained for this new poly-Si TFT. The maximum ON/OFF current ratio of about 1×10/sup 8/ is obtained for the LDD length of 1.0 μm. In addition, the kink effect in the output characteristics has been remarkably improved in the new TFTs in comparison to the conventional non-LDD single- or dual-gate TFTs.
Keywords :
elemental semiconductors; leakage currents; semiconductor device reliability; silicon; thin film transistors; 1.0 micron; LDD polysilicon TFT structure; ON/OFF current ratio; Si; bidirectional I/sub D/-V/sub G/ characteristics; kink effect; leakage current; lightly doped drain; output characteristics; process misalignment; symmetrical electrical characteristics; Active matrix liquid crystal displays; Amorphous silicon; Bidirectional control; Crystallization; Electric variables; Electrodes; Leakage current; Semiconductor films; Switching circuits; Thin film transistors;
Journal_Title :
Electron Device Letters, IEEE
