DocumentCode
1524978
Title
An 0.35-μm, 6-m/spl Omega/, 43 μ/spl Omega/-cmsub 2 lateral power MOSFET for low-voltage, megahertz switching power applications
Author
Sun, N.X. ; Huang, A.Q.
Author_Institution
Center for Power Electron. Syst., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Volume
20
Issue
7
fYear
1999
fDate
7/1/1999 12:00:00 AM
Firstpage
351
Lastpage
353
Abstract
Power MOSFET technology has to be improved significantly in order to address the needs of very low voltage power conversion applications such as that powers the future microprocessor. Detailed studies by the author indicate that device technology that is suitable for this type of application is not the conventional vertical power MOSFET technology; instead, a lateral power MOSFET technology based on the VLSI technology is more suitable. We report for the first time the experimental result of a 6-m/spl Omega/, 43 μ/spl Omega/-cm2 lateral power MOSFET based on 0.35-μm VLSI design rule. With a gate-charge of only about 3 nC, in terms of on-resistance gate-charge product, these results are the best ever reported for sub-20-V power MOSFET.
Keywords
field effect transistor switches; low-power electronics; power MOSFET; power semiconductor switches; 0.35 micron; 20 V; 6 mohm; VLSI technology; gate charge; lateral power MOSFET; low voltage power conversion; megahertz switching; microprocessor; on-resistance; Low voltage; MOSFET circuits; Microprocessors; Power MOSFET; Power conversion; Power dissipation; Power supplies; Sun; Switching loss; Very large scale integration;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.772373
Filename
772373
Link To Document