DocumentCode :
1524993
Title :
Channeling of low-energy implanted ions through the poly-Si gate
Author :
Hobler, G. ; Bevk, J. ; Agarwal, A.
Author_Institution :
Univ. of Technol. Vienna, Austria
Volume :
20
Issue :
7
fYear :
1999
fDate :
7/1/1999 12:00:00 AM
Firstpage :
357
Lastpage :
359
Abstract :
Ion channeling through the poly-Si gate is investigated using Monte Carlo simulations. It is shown that even at very low energies, channeling may lead to dopant penetration through the gate oxide, resulting in large threshold voltage variations, in particular, of narrow-channel, submicron devices, Unlike thermally activated dopant diffusion through the gate dielectric that is severe only in the case of B, direct penetration due to channeling is a potential problem with all commonly used dopants. The maximum channeling range (minimum poly-Si thickness to prevent dopant penetration) is calculated as a function of implant energy for B, P, and As ions.
Keywords :
Monte Carlo methods; channelling; doping profiles; elemental semiconductors; ion implantation; silicon; Monte Carlo simulation; Si:As; Si:B; Si:P; dopant profile; ion channeling; ion implantation; narrow-channel submicron device; polysilicon gate oxide; range; threshold voltage; CMOS technology; Dielectrics; Doping; Implants; Ion implantation; Lead compounds; Semiconductor process modeling; Silicon; Threshold voltage; Uncertainty;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.772375
Filename :
772375
Link To Document :
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