Title :
Low-power bandgap references featuring DTMOSTs
Author :
Annema, Anne-Johan
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
fDate :
7/1/1999 12:00:00 AM
Abstract :
This paper describes two CMOS bandgap reference circuits featuring dynamic-threshold MOS transistors. The first bandgap reference circuit aims at application in low-voltage, low-power ICs that tolerate medium accuracy. The circuit runs at supply voltages down to 0.85 V while consuming only 1 μW; the die area is 0.063 mm2 in a standard digital 0.35-μm CMOS process. The second bandgap reference circuit aims at high accuracy operation (σ=0.3%) without trimming. It consumes approximately 5 μW from a 1.8-V supply voltage and occupies 0.06 mm2 in a standard 0.35-μm CMOS process
Keywords :
CMOS analogue integrated circuits; low-power electronics; reference circuits; 0.35 micron; 0.85 V; 1 muW; 1.8 V; 5 muW; CMOS process; DTMOST; LV low-power ICs; dynamic-threshold MOS transistors; dynamic-threshold MOSFETs; high accuracy operation; low-power bandgap references; low-voltage ICs; medium accuracy operation; Analog integrated circuits; CMOS integrated circuits; CMOS process; Diodes; MOSFETs; Photonic band gap; Resistors; Temperature dependence; Temperature distribution; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
