DocumentCode
15252
Title
GaN-Based Light-Emitting-Diode With a p-InGaN Layer
Author
Chen, P.H. ; Cheng-Huang Kuo ; Lai, W.C. ; Yu An Chen ; Chang, L.C. ; Chang, S.J.
Author_Institution
Inst. of Electro-Opt. Sci. & Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume
10
Issue
3
fYear
2014
fDate
Mar-14
Firstpage
204
Lastpage
207
Abstract
GaN-based LEDs with a p-InGaN layer was proposed and fabricated. By inserting the 50-nm-thick p-In0.01Ga0.99N layer, it was found that we could reduce the 20 mA forward voltage from 3.34 to 2.99 V. It was found the inserted p-InGaN layer could also reduce the efficiency droop from 36.7% to 23.8%.
Keywords
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; wide band gap semiconductors; In0.01Ga0.99N-GaN; LED; current 20 mA; efficiency 23.8 percent; efficiency 36.7 percent; efficiency droop; forward voltage; light emitting diode; p-InGaN layer; size 50 nm; voltage 2.99 V; voltage 3.34 V; Educational institutions; Electrical engineering; Gallium nitride; Light emitting diodes; Photonics; Physics; Quantum well devices; Efficiency droop; light emitting diode (LED); p-InGaN;
fLanguage
English
Journal_Title
Display Technology, Journal of
Publisher
ieee
ISSN
1551-319X
Type
jour
DOI
10.1109/JDT.2013.2293767
Filename
6679256
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