Intrinsic 1/f device noise reduction and its effect on phase noise in CMOS ring oscillators

Author

Gierkink, Sander L J ; Klumperink, Eric A M ; Van der We, Arnoud P. ; Hoogzaad, Gian ; Van Tuijl, Ed A J M ; Nauta, Bram

Author_Institution

MESA Res. Inst., Twente Univ., Enschede, Netherlands

Volume

34

Issue

7

fYear

1999

fDate

7/1/1999 12:00:00 AM

Firstpage

1022

Lastpage

1025

Abstract

This paper gives experimental proof of an intriguing physical effect: periodic on-off switching of MOS transistors in a CMOS ring oscillator reduces their intrinsic 1/f noise and hence the oscillator´s close-in phase noise. More specifically, it is shown that the 1/f³ phase noise is dependent on the gate-source voltage of the MOS transistors in the off state. Measurement results, corrected for waveform-dependent upconversion and effective bias, show an 8-dB-lower 1/f³ phase noise than expected. It will be shown that this can be attributed to the intrinsic 1/f noise reduction effect due to periodic on-off switching

Keywords

1/f noise; CMOS integrated circuits; integrated circuit design; integrated circuit noise; oscillators; phase noise; 1/f³ phase noise; CMOS ring oscillators; MOS transistors; close-in phase noise; effective bias; gate-source voltage; intrinsic 1/f device noise reduction; periodic on-off switching; phase noise; waveform-dependent upconversion; Baseband; Circuit noise; MOSFETs; Noise measurement; Noise reduction; Phase measurement; Phase noise; Probes; Ring oscillators; Threshold voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.772418

Filename

772418