A hermetic glass-silicon package formed using localized aluminum/silicon-glass bonding

Author

Cheng, Yu-Ting ; Lin, Liwei ; Najafi, Khalil

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

10

Issue

3

fYear

2001

fDate

9/1/2001 12:00:00 AM

Firstpage

392

Lastpage

399

Abstract

A hermetic package based on localized aluminum/silicon-to-glass bonding has been successfully demonstrated. Less than 0.2 MPa contact pressure with 46 mA current input for two parallel 3.5-μm-wide polysilicon on-chip microheaters can raise the temperature of the bonding region to 700°C bonding temperature and achieve a strong and reliable bond in 7.5 min. The formation of aluminum oxide with silicon precipitate composite layer is believed to be the source of the strong bond. Accelerated testing in an autoclave shows some packages survive more than 450 h under 3 atm, 100% RH and 128°C. Premature failure has been attributed to some unbonded regions on the failed samples. The bonding yield and reliability have been improved by increasing bonding time and applied pressure

Keywords

aluminium; glass; life testing; micromechanical devices; packaging; reliability; silicon; 0.2 MPa; 128 C; 3 atm; 3.5 micron; 450 hour; 46 mA; 7.5 min; 700 C; Al; AlO-Si; Si; Si precipitate composite layer; accelerated testing; aluminum oxide formation; applied pressure; autoclave; bonding time; bonding yield; hermetic glass-Si package; localized Al/Si-glass bonding; polysilicon onchip microheaters; reliability; reliable bond; Aluminum; Bonding; Fabrication; Heating; Integrated circuit packaging; Integrated circuit reliability; Micromechanical devices; Protection; Silicon; Temperature;

fLanguage

English

Journal_Title

Microelectromechanical Systems, Journal of

Publisher

ieee

ISSN

1057-7157

Type

jour

DOI

10.1109/84.946791

Filename

946791