DocumentCode
1525254
Title
Minimisation of base transit time in AlGaAs/GaAs heterostructure bipolar transistor (HBT)
Author
Zebda, Y. ; Elnagar, A. ; Hussein, A.
Author_Institution
Dept. of Electr. & Comput. Eng., Sultan Qaboos Univ., Muscat, Oman
Volume
144
Issue
6
fYear
1997
fDate
12/1/1997 12:00:00 AM
Firstpage
375
Lastpage
377
Abstract
A new trial function for the base doping profile in an AlGaAs/GaAs heterojunction bipolar transistor (HBT) is proposed. It is found that for certain doping parameters this base doping profile will minimise the base transit time. Furthermore, this function is neither exponential nor Gaussian as claimed by previous studies. In the paper the base width and the peak base doping are held constant
Keywords
III-V semiconductors; aluminium compounds; doping profiles; gallium arsenide; heterojunction bipolar transistors; AlGaAs-GaAs; AlGaAs/GaAs HBT; base doping profile; base transit time minimisation; doping parameters; heterostructure bipolar transistor; trial function;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings -
Publisher
iet
ISSN
1350-2409
Type
jour
DOI
10.1049/ip-cds:19971488
Filename
646822
Link To Document