Novel offset gated poly-Si TFTs with subgate

Author

Park, Cheol-Min ; Min, Byung-Hyuk ; Han, Min Koo

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ., South Korea

Volume

46

Issue

7

fYear

1999

fDate

7/1/1999 12:00:00 AM

Firstpage

1402

Lastpage

1405

Abstract

We have fabricated a new offset gated poly-Si TFT by employing photoresist reflow, have measured various experimental data of the new device, such as hydrogenation results and high-frequency characteristics, and have analyzed device characteristics as a function of driving frequency. Our devices have a unique gate pattern and the hydrogenation effect is somewhat different from the previous results. Our experimental results suggest that with the same offset length, the device with a wider space between the maingate and the subgate is more advantageous for hydrogenation. Experimental results show that the leakage current of the new device is two orders of magnitude lower than that of the nonoffset gated device, while the ON current of the new device is almost identical to the nonoffset gated device in the typically used frequency range (10-100 kHz)

Keywords

elemental semiconductors; hydrogenation; silicon; thin film transistors; 10 to 100 kHz; ON current; Si; Si:H; driving frequency; high-frequency characteristics; hydrogenation; leakage current; offset gated polysilicon TFT; photoresist reflow; subgate; Active matrix liquid crystal displays; Electric resistance; Electrodes; Fabrication; Frequency measurement; Ion implantation; Leakage current; Resists; Thin film transistors; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.772482

Filename

772482