Characteristics of p-channel polysilicon conductivity modulated thin-film transistors

Author

Zhu, Chunxiang ; Sin, Johnny K O ; Ng, Wai Tung

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Clear Water Bay, Hong Kong

Volume

46

Issue

7

fYear

1999

fDate

7/1/1999 12:00:00 AM

Firstpage

1406

Lastpage

1410

Abstract

A p-channel polysilicon conductivity modulated thin-film transistor (CMTFT) is demonstrated and experimentally characterized. The transistor uses the concept of conductivity modulation in the offset region to obtain a significant reduction in on-state resistance. The conductivity modulation is achieved by injecting minority carriers (electrons) into the offset region through a diode added to the drain. Experimental results show that the conductivity modulation in the p-channel device is as effective as that in the n-channel device. This structure can provide 1.5 to 2 orders of magnitude higher on-state current than that of the conventional offset drain thin-film transistor (TFT) at drain voltage ranging from -15 V to -5 V while still maintaining low leakage current and simplicity in device operation. The p-channel CMTFT can be combined with the n-channel CMTFT to form CMOS high-voltage drivers, which is very suitable for use in fully integrated large-area electronic applications

Keywords

elemental semiconductors; silicon; thin film transistors; CMTFT; Si; conductivity modulation; leakage current; low temperature operation; minority carrier injection; on-state resistance; p-channel polysilicon conductivity modulated thin film transistor; Conductivity; Diodes; Driver circuits; Electrons; Glass; Leakage current; Liquid crystal displays; Silicon compounds; Substrates; Thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.772483

Filename

772483