Title :
Physically-based threshold voltage determination for MOSFET´s of all gate lengths
Author :
Tsuno, Morikazu ; Suga, Masato ; Tanaka, Masayasu ; Shibahara, Kentaro ; Miura-Mattausch, Mitiko ; Hirose, Masataka
Author_Institution :
Matsushita Electron. Corp., Kyoto, Japan
fDate :
7/1/1999 12:00:00 AM
Abstract :
A reliable method to determine the threshold voltage Vth for MOSFETs with gate length down to the sub-0.1 μm region is proposed. The method determines Vth by linear extrapolation of the transconductance gm to zero and is therefore named “GMLE method”. To understand the physical meaning of the method and to prove its reliability for different technologies 2-D simulation was applied. The results reveal that determined Vth values always meet the threshold condition, i.e., the onset of inversion layer buildup
Keywords :
MOSFET; extrapolation; semiconductor device models; 0.1 micron; 2D simulation; GMLE method; MOSFET; gate length; inversion layer; linear extrapolation; physical model; threshold voltage; transconductance; Associate members; Capacitance measurement; Current measurement; Data mining; Extrapolation; Helium; Length measurement; MOSFET circuits; Threshold voltage; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
