Title :
DC and transient characterization of a compact Schottky body contact technology for SOI transistors
Author :
Sleight, Jeffrey W. ; Mistry, Kaizad R.
Author_Institution :
Digital Equipment Corp., Hudson, MA, USA
fDate :
7/1/1999 12:00:00 AM
Abstract :
A self-aligned Schottky diode method for body contacting partially depleted silicon-on-insulator (SOI) transistors applicable to technologies that incorporate silicide cladded junctions is presented. The Schottky body contacted transistor requires no extra manufacturing steps, uses the same or less area than a transistor using other body contacting schemes and allows bi-directional operation. Extensive dc and transient characterization of the Schottky body contact illustrates its utility
Keywords :
MOSFET; Schottky barriers; silicon-on-insulator; transients; DC characterization; SOI transistors; bi-directional operation; cladded junctions; compact Schottky body contact technology; partially depleted devices; transient characterization; Bidirectional control; Circuits; Implants; MOS devices; MOSFETs; Manufacturing; Research and development; Schottky diodes; Silicides; Silicon on insulator technology;
Journal_Title :
Electron Devices, IEEE Transactions on
