• DocumentCode
    1525491
  • Title

    \\hbox {Zr}_{x}\\hbox {Ti}_{1 - x}\\hbox {O}_{2} -Based Ultraviolet Detectors Series

  • Author

    Zhang, Haifeng ; Feng, Caihui ; Liu, Caixia ; Xie, Tianjiao ; Zhou, Jingran ; Ruan, Shengping

  • Author_Institution
    State Key Lab. on Integrated Optoelectron., Jilin Univ., Changchun, China
  • Volume
    32
  • Issue
    7
  • fYear
    2011
  • fDate
    7/1/2011 12:00:00 AM
  • Firstpage
    934
  • Lastpage
    936
  • Abstract
    In this letter, ZrxTi1-xO2-based ultraviolet (UV) detector series with Pt electrodes were fabricated. The ZrxTi1-xO2thin films were prepared by a sol-gel method and characterized by means of X-ray diffraction and UV-visible absorption spectra. At 5 V bias, the dark currents of the detectors were less than 7 nA; under radiation of UV light, a high responsivity rate of 470 A/W was achieved at 270 nm for the Zr0.1Ti0.9O2 detector. The results showed that, at low Zr doping, the photoresponse was greatly improved, whereas at high Zr doping, the response peaks shift to the short-wavelength direction, which provides a new platform to fabricate solar-blind UV detectors.
  • Keywords
    X-ray diffraction; platinum; semiconductor thin films; sol-gel processing; ultraviolet detectors; ultraviolet spectra; visible spectra; wide band gap semiconductors; zirconium compounds; Pt electrodes; UV-visible absorption spectra; X-ray diffraction; ZrxTi1-xO2; dark currents; fabrication; photoresponse; sol-gel method; thin films; ultraviolet detector series; Absorption; Dark current; Detectors; Doping; Electrodes; Materials; Zirconium; $hbox{Zr}_{x}hbox{Ti}_{1 - x}hbox{O}_{2}$; Sol–gel; ultraviolet (UV) detector;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2148690
  • Filename
    5773077