Title :
On the impact of the capture rates on the generation/recombination lifetime ratio of a single deep level
Author :
Simoen, Eddy ; Claeys, Cor
Author_Institution :
IMEC, Leuven, Belgium
fDate :
7/1/1999 12:00:00 AM
Abstract :
The impact of the capture rate ratio on the determination of the generation/recombination (GR) level position from the ratio of the generation and recombination lifetime of a single deep centre is investigated. This is achieved by a further elaboration on the work by Schroder (1982). It is shown that for realistic lifetime ratios (⩾50), the derived trap energy ET should be close to the real value, irrespective of the capture rates
Keywords :
carrier lifetime; deep levels; electron traps; electron-hole recombination; capture rate; deep level; generation/recombination lifetime ratio; trap energy; Charge carrier lifetime; Charge carrier processes; Energy capture; Energy states; Equations; Radiative recombination; Semiconductor device measurement; Semiconductor devices; Semiconductor impurities; Spontaneous emission;
Journal_Title :
Electron Devices, IEEE Transactions on
