A new “critical-current at linear-threshold” method for direct extraction of deep-submicron MOSFET effective channel length

Author

Zhou, X. ; Lim, K.Y. ; Lim, D.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore

Volume

46

Issue

7

fYear

1999

fDate

7/1/1999 12:00:00 AM

Firstpage

1492

Lastpage

1494

Abstract

A novel method for direct extraction of deep-submicron MOSFET effective channel length is proposed, which requires only a single measurement of the “critical-current at linear-threshold” (“I_crit@V_t0”) based on the maximum-g _m definition. With a simple calibration of the channel sheet resistance from the long-channel I_crit data, the effective channel length of any short-channel device on the same wafer can be determined with one measurement of I_crit@V_t0. Meanwhile, an averaged (modeled) effective channel length can be obtained from the same data set with a simple algorithm, which can be used for device/circuit modeling

Keywords

MOSFET; calibration; semiconductor device measurement; semiconductor device models; MOSFET effective channel length; calibration; channel sheet resistance; critical-current at linear-threshold; deep-submicron MOSFET; maximum-g_m definition; short-channel device; Calibration; Current measurement; Curve fitting; Data mining; Electrical resistance measurement; Length measurement; MOSFET circuits; Process control; Semiconductor device modeling; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.772497

Filename

772497