Title :
A new “critical-current at linear-threshold” method for direct extraction of deep-submicron MOSFET effective channel length
Author :
Zhou, X. ; Lim, K.Y. ; Lim, D.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
fDate :
7/1/1999 12:00:00 AM
Abstract :
A novel method for direct extraction of deep-submicron MOSFET effective channel length is proposed, which requires only a single measurement of the “critical-current at linear-threshold” (“Icrit@Vt0”) based on the maximum-g m definition. With a simple calibration of the channel sheet resistance from the long-channel Icrit data, the effective channel length of any short-channel device on the same wafer can be determined with one measurement of Icrit@Vt0. Meanwhile, an averaged (modeled) effective channel length can be obtained from the same data set with a simple algorithm, which can be used for device/circuit modeling
Keywords :
MOSFET; calibration; semiconductor device measurement; semiconductor device models; MOSFET effective channel length; calibration; channel sheet resistance; critical-current at linear-threshold; deep-submicron MOSFET; maximum-gm definition; short-channel device; Calibration; Current measurement; Curve fitting; Data mining; Electrical resistance measurement; Length measurement; MOSFET circuits; Process control; Semiconductor device modeling; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
