• DocumentCode
    1525541
  • Title

    Tunneling bursts for negligible SILC degradation

  • Author

    Riccò, Bruno ; Pieracci, A.

  • Author_Institution
    Dept. of Electron., Bologna Univ., Italy
  • Volume
    46
  • Issue
    7
  • fYear
    1999
  • fDate
    7/1/1999 12:00:00 AM
  • Firstpage
    1497
  • Lastpage
    1500
  • Abstract
    This paper suggests the use of high-voltage tunneling bursts for (virtually) SILC-free current injection in ultra-thin MOS structures and indicates the possibility of fast programming of tunnel-based nonvolatile memories
  • Keywords
    EPROM; MOS memory circuits; integrated circuit reliability; leakage currents; tunnelling; SILC degradation; SILC-free current injection; fast programming; high-voltage tunneling bursts; stress-induced leakage current; tunnel-based nonvolatile memories; ultra-thin MOS structures; Current density; Degradation; Nonvolatile memory; Optical reflection; Photovoltaic cells; Silicon; Stress; Surface resistance; Surface texture; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.772499
  • Filename
    772499
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1525541