Title :
MOS capacitance measurements for high-leakage thin dielectrics
Author :
Yang, Kevin J. ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fDate :
7/1/1999 12:00:00 AM
Abstract :
As oxide thickness is reduced below 2.5 nm in MOS devices, both series and shunt parasitic resistances become significant in capacitance-voltage (C-V) measurements. A new technique is presented which allows the frequency-independent device capacitance to be accurately extracted from impedance measurements at two frequencies. This technique is demonstrated for a 1.7 nm SiO2 capacitor
Keywords :
MOS capacitors; MOSFET; capacitance measurement; dielectric thin films; electric impedance measurement; leakage currents; semiconductor device measurement; 1.7 to 2.5 nm; MOS devices; capacitance measurements; frequency-independent device capacitance; high-leakage thin dielectrics; impedance measurements; oxide thickness; series parasitic resistances; shunt parasitic resistances; Capacitance measurement; Capacitance-voltage characteristics; Dielectric measurements; Electrical resistance measurement; Frequency; Impedance measurement; MOS capacitors; MOS devices; Parasitic capacitance; Thickness measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
