A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters

Author

Jouan, Sebastien ; Planche, Richard ; Baudry, Hélène ; Ribot, Pascal ; Chroboczek, Jan A. ; Dutartre, Didier ; Gloria, Daniel ; Laurens, Michel ; Llinares, Pierre ; Marty, Michel ; Monroy, Augustin ; Morin, Christine ; Pantel, Roland ; Perrotin, Andre ; d

Author_Institution

France Telecom, CNET Grenoble, Meylan, France

Volume

46

Issue

7

fYear

1999

fDate

7/1/1999 12:00:00 AM

Firstpage

1525

Lastpage

1531

Abstract

A 200 mm 0.35 μm silicon-germanium heterojunction bipolar transistor (SiGe HBT) technology involving epitaxially-aligned polysilicon emitters is described. The devices are shown to combine the high speed performances typical for poly-Si emitter SiGe base devices (f _max up to 70 GHz) and the low 1/f noise properties of monocrystalline emitter structures (noise figure-of-merit KB as low as 7.2×10^-10 μm²). Statistical current gain data are used to demonstrate the manufacturability of this innovative SiGe HBT technology

Keywords

1/f noise; Ge-Si alloys; bipolar integrated circuits; heterojunction bipolar transistors; high-speed integrated circuits; integrated circuit measurement; integrated circuit noise; integrated circuit technology; semiconductor materials; 0.35 micron; 200 mm; 70 GHz; Si-SiGe; SiGe HBT technology; epitaxially-aligned polysilicon emitters; heterojunction bipolar transistor; high-speed HBT technology; low 1/f noise HBT technology; manufacturability; statistical current gain data; Bipolar transistors; Fabrication; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Isolation technology; Low-frequency noise; Noise figure; Silicon germanium; Telecommunications;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.772506

Filename

772506