• DocumentCode
    1525616
  • Title

    Self-aligned CoSi2 for 0.18 μm and below

  • Author

    Maex, Karen ; Lauwers, Anne ; Besser, Paul ; Kondoh, Eiichi ; De Potter, Muriel ; Steegen, An

  • Author_Institution
    IMEC, Leuven, Belgium
  • Volume
    46
  • Issue
    7
  • fYear
    1999
  • fDate
    7/1/1999 12:00:00 AM
  • Firstpage
    1545
  • Lastpage
    1550
  • Abstract
    CoSi2 is being used commonly for the advanced IC technologies. There are several process choices to be made for the formation of a high yielding and reproducible silicide. In this paper the various CoSi2 technologies are discussed. The scalability of the process of record, the Co/Ti(cap) process are presented for 0.18 μm and below
  • Keywords
    cobalt compounds; integrated circuit manufacture; integrated circuit metallisation; 0.18 micron; Co-Ti; Co/Ti cap process; CoSi2; CoSi2 formation process; CoSi2 technologies; IC technologies; Ti capping layer; high yielding silicide; process scalability; reproducible silicide; self-aligned CoSi2; Chemical technology; Cleaning; Manufacturing processes; Rapid thermal processing; Scalability; Silicidation; Silicides; Thermal resistance; Thermal stresses; Tin;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.772509
  • Filename
    772509
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1525616