• DocumentCode
    1525654
  • Title

    Electromechanical coupling constant extraction of thin-film piezoelectric materials using a bulk acoustic wave resonator

  • Author

    Naik, Rajan S. ; Lutsky, Joseph J. ; Reif, Rafael ; Sodini, Charles G.

  • Author_Institution
    MIT, Cambridge, MA, USA
  • Volume
    45
  • Issue
    1
  • fYear
    1998
  • Firstpage
    257
  • Lastpage
    263
  • Abstract
    Thin-film piezoelectric materials such as ZnO and AlN have great potential for on-chip devices such as filters, actuators and sensors. The electromechanical coupling constant is an important material parameter which determines the piezoelectric response of these films. This paper presents a technique based on the Butterworth Van-Dyke (BVD) model which, together with a simple one-mask over-moded resonator, can be used to extract the bulk, one-dimensional electromechanical coupling constant K2 of any piezoelectrically active thin-film. The BVD model is used to explicitly define the series resonance, parallel resonance, and quality factor Q of any given resonating mode. Common methods of defining the series resonance, parallel resonance, and Q are shown to be inaccurate for low coupling, lossy resonators such as the over-moded resonator. Specifically, an electromechanical coupling constant K2 of (2.6±0.1)% was measured for an (002) c-axis textured AlN film with an X-ray diffraction rocking curve of 7.5° using the BVD based extraction technique
  • Keywords
    Q-factor; acoustic resonators; aluminium compounds; bulk acoustic wave devices; piezoelectric thin films; AlN; Butterworth Van-Dyke model; X-ray diffraction rocking curve; bulk acoustic wave resonator; one-dimensional electromechanical coupling constant; one-mask over-moded resonator; parallel resonance; parameter extraction; quality factor; series resonance; thin film piezoelectric material; Electromechanical sensors; Piezoelectric actuators; Piezoelectric films; Piezoelectric materials; Resonance; Resonator filters; Thin film devices; Thin film sensors; Transistors; Zinc oxide;
  • fLanguage
    English
  • Journal_Title
    Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-3010
  • Type

    jour

  • DOI
    10.1109/58.646930
  • Filename
    646930