Implementation of an a-Si:H TFT Gate Driver Using a Five-Transistor Integrated Approach

Author

Liao, Congwei ; He, Changde ; Chen, Tao ; Dai, David ; Chung, Smart ; Jen, T.S. ; Zhang, Shengdong

Author_Institution

Shenzhen Grad. Sch., Peking Univ., Shenzhen, China

Volume

59

Issue

8

fYear

2012

Firstpage

2142

Lastpage

2148

Abstract

An integrated five-transistor/one-capacitor approach for realizing a a-Si:H thin-film transistor (TFT) gate driver operating in multiphase-clock mode is proposed and investigated. The driver needs only one large-size TFT and one small-size storage capacitor. The performance and function of the proposed driver are verified experimentally. The dependence of the performance on the device size is studied in detail. Stability of the fabricated drivers is tested using a flexible measurement scheme. Measured results show that the fabricated gate driver can work stably even though the low-level-holding TFTs have a threshold-voltage shift of 19 V.

Keywords

elemental semiconductors; silicon; thin film transistors; Si:H; TFT gate driver; five-transistor integrated approach; flexible measurement scheme; hydrogenated amorphous silicon; low-level-holding TFT; multiphase-clock mode; one-capacitor approach; small-size storage capacitor; thin-film transistor; threshold-voltage shift; voltage 19 V; Capacitors; Delay; Driver circuits; Electrodes; Logic gates; Temperature measurement; Thin film transistors; Amorphous silicon; gate driver; multiple-phase clocks; thin-film transistors (TFTs); threshold-voltage shift;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2197624

Filename

6205619