Threshold Voltage and Mobility Extraction by Ultrafast Switching Measurement on NBTI

A simple but robust methodology for the extraction of threshold voltage (V_t) and hole mobility by ultrafast switching measurement on NBTI is demonstrated. It is shown that during the measurement of the linear drain current (I_d) versus gate voltage (V_g) curve by ultrafast switching, recovery can be constantly minimized at a very short delay (100 ns) and made independent of the aggregate I_d-V_g measurement time (~5 s). In conjunction with the Y -function method, V_t and mobility degradation can be straightforwardly and yet accurately examined over the same measurement voltage range. Moreover, their respective contributions toward p-MOSFET NBTI can clearly be delineated.