DocumentCode :
1525890
Title :
Measurement of Dipoles/Roll-Off /Work Functions by Coupling CV and IPE and Study of Their Dependence on Fabrication Process
Author :
Charbonnier, Matthieu ; Leroux, Charles ; Cosnier, V. ; Besson, P. ; Martinez, E. ; Benedetto, N. ; Licitra, Christophe ; Rochat, Névine ; Gaumer, C. ; Kaja, K. ; Ghibaudo, Gérard ; Martin, François ; Reimbold, Gilles
Author_Institution :
LETI/Minatec, CEA, Grenoble, France
Volume :
57
Issue :
8
fYear :
2010
Firstpage :
1809
Lastpage :
1819
Abstract :
We study the effective metal gate work function (WFMeff) of different metal/high-κ gate stacks. Both capacitance versus voltage measurement and internal photo emission measurement were used, leading to a better understanding of the WFMeff variations. We demonstrate that these variations are related to two main process dependent parameters, a voltage drop at the high- κ/SiO2 interface and the metal work function. These two parameters are studied for various process conditions.
Keywords :
capacitance measurement; photoemission; silicon compounds; voltage measurement; SiO2; capacitance measurement; capacitance versus voltage analysis; fabrication process; internal photo emission measurement; voltage measurement; Annealing; Capacitance measurement; Fabrication; Helium; Inorganic materials; Leakage current; MOSFETs; Photoelectricity; Voltage fluctuations; Voltage measurement; Capacitance versus voltage (CV); dipole; high- $kappa$; internal photo emission (IPE); work function;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2010.2050957
Filename :
5497126
Link To Document :
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